UPA1723 Datasheet, PDF (2/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

µ PA1723
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.5 V, ID = 7.0 A
5.4 6.7 mΩ
RDS(on)2 VGS = 4.0 V, ID = 7.0 A
5.5 7.4 mΩ
RDS(on)3 VGS = 2.5 V, ID = 7.0 A
6.5 8.7 mΩ
Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
VGS(off)
| yfs |
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7.0 A
0.5 0.9 1.5 V
15.0 32
S
Drain Leakage Current
Gate to Source Leakage Current
IDSS
VDS = 20 V, VGS = 0 V
IGSS
VGS = ±12 V, VDS = 0 V
10 µA
±10 µA
Input Capacitance
Ciss
VDS = 10 V
3800
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
700
pF
Turn-on Delay Time
td(on)
ID = 7.0 A
70
ns
Rise Time
tr
VGS(on) = 4.5 V
440
ns
Turn-off Delay Time
td(off)
VDD = 10 V
230
ns
Fall Time
tf
RG = 10 Ω
300
ns
Total Gate Charge
QG
ID = 13 A
47.0
nC
Gate to Source Charge
QGS
VDD = 16 V
11.0
nC
Gate to Drain Charge
QGD
VGS = 4.5 V
12.0
nC
Body Diode Forward Voltage
VF(S-D) IF = 13.0 A, VGS = 0 V
0.75
V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 13.0 A, VGS = 0 V
Qrr
di/dt = 100 A/ µs
68
ns
70
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RG
RL
VGS
VGS
Wave Form
010 ^%
90 %
VGS(on)
IG = 2 mA
RL
PG.
RG = 10 Ω
VDD
PG.
50 Ω
VDD
ID
90 %
90 %
VGS
0
ID
ID
0 ^{10 %}
Wave Form
10 %
τ
td(on)
tr
td(off)
tf
τ = 1µ s
Duty Cycle ≤ 1 %
ton
toff
2
Data Sheet G14026EJ1V0DS00