UPA1723 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1723 is N-Channel MOS Field Effect Transistor
designed for power management switch.
FEATURES
• Low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
RDS(on)2 = 7.4 mΩ MAX. (VGS = 4.0 V, ID = 7.0 A)
RDS(on)3 = 8.7 mΩ MAX. (VGS = 2.5 V, ID = 7.0 A)
• Low Ciss : Ciss = 3800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1723G
Power SOP8
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
1
4
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
ID(DC)
±13
A
Drain Current (pulse) ^Note1
ID(pulse)
±52
A
Total Power Dissipation (TA = 25°C) ^Note2
PT
2.0
W
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 2.2mm
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14026EJ1V0DS00 (1st edition)
Date Published December 1999 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1998, 1999