HR1F3P Datasheet, PDF (2/6 Pages) NEC – On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤  µV GXW\ F\FOH ≤ 
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.4 A
VCE = −5.0 V, IC = −100 µA
+5)3
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤  µV GXW\ F\FOH ≤ 
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = –5.0 V, IC = −100 µA
+5/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤  µV GXW\ F\FOH ≤ 
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 µA
HR1 SERIES
MIN.
TYP.
MAX.
Unit
−100
nA
50
−
100
−
50
−
−0.4
V
−0.3
V
0.7
1.0
1.3
kΩ
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
150
−
100
−
50
−
−0.3
V
−0.3
V
1.54
2.2
2.86
kΩ
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
150
−
100
−
50
−
−0.3
V
−0.3
V
3.29
4.7
6.11
kΩ
7
10
13
kΩ

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