HR1F3P Datasheet, PDF (1/6 Pages) NEC – On-chip resistor PNP silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as IC outputs and actuators
available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HR1 SERIES LISTS
Products
Marking
HR1A3M
MP
HR1F3P
MQ
HR1L3N
MR
HR1A4,
MS
HR1L2Q
MT
HR1F2Q
MU
HR1A4A
MX
R1 (KΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (KΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−1.0
A
Collector current (Pulse)
IC(pulse) *
−2.0
A
Base current (DC)
IB(DC)
−0.02
A
Total power dissipation
PT **
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm² ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928