3SK299 Datasheet, PDF (2/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD

3SK299
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100 125
TA – Ambient Temperature – ˚C
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
30
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
0.5 V
20
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
30
VDS = 5 V
VG2S = 1.0 V
20
0.5 V
10
0V
–0.5 V
0 _–1.0
0
+1.0
VG1S – Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
20
VG2S = 0.5 V
0V
10
–0.5 V
0
–1.0
0
+1.0
VG1S – Gate 1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.0
VDS = 5 V
f = 1 MHz
VG2S = 1 V at ID = 10 mA
1.0
VG2S = 1 V at ID = 5 mA
0
–1.0
0
+1.0
VG2S – Gate 2 to Source Voltage – V
10
0
10
20
30
ID – Drain Current – mA
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
30
VDS = 5 V
VG2S = 1 V
15
at ID = 10 mA
f = 900 MHz
GPS
0
5
–15
–30
NF
0
–45
–3.0 –2.0 –1.0
0
+1.0
+2.0
VG2S – Gate 2 to Source Voltage – V
2