3SK299 Datasheet, PDF (1/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD

DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR
4 PIN SMALL MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High GPS : 20 dB TYP.
• Low NF : 1.1 dB TYP.
• 4 PIN SMALL MINI MOLD PACKAGE
PACKAGE DIMENSIONS
in millimeters
2.1±0.2
1.25±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
13
V
Gate1 to Source Voltage
VG1S
–4.5
V
Gate2 to Source Voltage
VG2S
–4.5
V
Drain Current
ID
40
mA
Total Power Dissipation
PT
120
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
1. Source
2. Drain
3. Gate 2
4. Gate 1
CHARACTERISTIC
Drain Current
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
SYMBOL
IDSX
IDSS
VG1S(off)
VG2S(off)
IG1SS
IG2SS
|yfs|
MIN.
5
18
Ciss
0.5
Crss
GPS
16.0
NF
TYP.
20
25
1.0
0.02
20.0
1.1
MAX.
10
40
–3.5
–3.5
10
10
35
1.5
0.03
2.5
UNIT
µA
mA
V
V
µA
µA
ms
pF
pF
dB
dB
TEST CONDITIONS
VDS = 13 V, VG1S = –4 V, VG2S = 0
VDS = 5 V, VG2S = 0, VG1S = 0
VDS = 5 V, VG2S = 0 , ID = 100 µA
VDS = 5 V, VG1S = 0, ID = 100 µA
VDS = 0, VG1S = –4 V, VG2S = 0
VDS = 0, VG2S = –4 V, VG1S = 0
VDS = 5 V, VG2S = 1 V, ID = 10 mA
f = 1.0 kHz
VDS = 5 V, VG2S = 1 V, ID = 10 mA
f = 1 MHz
VDS = 5 V, VG2S = 1 V, ID = 10 mA
f = 900 MHz
IDSS Classification
Class
Marking
IDSS
U71
U71
5 to 15
U72
U72
10 to 25
U73
U73
20 to 35
Unit: mA
U74
U74
30 to 40
Document No. P11034EJ1V0DS00 (1st edition)
Date Published December 1995 P
Printed in Japan
©
1995