3SK206 Datasheet, PDF (2/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

3SK206
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
400
300
200
100
0
25
50
75 100 125
TA – Ambient Temperature – °C
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
80
VDS = 5 V
f = 1 kHz
VG1S = 1 V
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
30 _{VDS = 5 V}
VG2S = 1 V at
GPS
ID = 10 mA
f = 900 MHZ
15
0
5
–15
–30
NF
0 –45
–3.0 –2.0 –1.0
0 +1.0 +2.0
VG2S – Gate 2 to Source Voltage – V
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
10
GPS
20
40
0.5 V
0
0
–1.8 –1.2 –0.6
–0.5 V
0 +0.6 +1.2
VG1S – Gate 1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.0
VDS = 5 V
f = 1 MHz
VG2S = 1 V at ID = 10 mA
VG2S = 1 V at ID = 5 mA
1.0
0
1.0
0
+1.0
VG2S – Gate 2 to Source Voltage – V
2
5 10
VG2S = 1 V
ID = 10 mA
f = 900 MHz
NF
0
0
5
10
VDS – Drain to Source Voltage – V
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
10 25
VDS = 5 V
VG2S = 1 V
GPS
f = 900 MHz
20
15
5
10
5
0
0
NF
5
10
ID – Drain Current – mA