3SK206 Datasheet, PDF (1/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK206
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss: 0.02 pF TYP.
• High GPS: 20 dB TYP.
• Low NF: 1.1 dB TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
10
V
Gate1 to Source Voltage
VG1S
–4.5
V
Gate2 to Source Voltage
VG2S
–4.5
V
Drain Current
ID
80
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg –55 to +125 °C
PACKAGE DIMENSIONS
in millimeters
2.8
+0.2
–0.3
1.5
+0.2
–0.1
5°
5°
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
Drain to Source Breakdown
Voltage
BVDSX
Drain Current
IDSS
Gate1 to Source Cutoff Voltage VG1S(off)
Gate2 to Source Cutoff Voltage VG2S(off)
Gate1 Reverse Current
IG1SS
Gate2 Reverse Current
IG2SS
Forward Transfer Admittance | yfs |
MIN.
10
10
25
TYP.
35
MAX.
80
–3.5
–3.5
10
10
Input Capacitance
Ciss
Reverse Transfer Capacitance Crss
Power Gain
GPS
Noise Figure
NF
1.0
16.0
1.5
0.02
20.0
1.1
2.0
0.035
2.5
5°
5°
1. Source
2. Drain
3. Gate 2
4. Gate 1
UNIT
V
TEST CONDITIONS
VG1S = –4 V, VG2S = 0, ID = 20 µA
mA
VDS = 5 V, VG1S = 0, VG2S = 0
V
VDS = 5 V, VG2S = 0, ID = 100 µA
V
VDS = 5 V, VG1S = 0, ID = 100 µA
µA
VDS = 0, VG1S = –4 V, VG2S = 0
µA
VDS = 0, VG2S = –4 V, VG1S = 0
mS VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1.0 kHz
pF
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
pF f = 1.0 MHz
dB
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
dB f = 900 MHz
IDSS Classification (Unit: mA)
Class
Marking
IDSS
U76
U76
10 to 25
U77
U77
20 to 35
U78
U78
30 to 50
U79
U79
45 to 80
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltage or fields.
Document No. P10568EJ2V0DS00 (2nd edition)
(Previous No. TC-2134)
Date Published August 1995 P
Printed in Japan
©
199857