3SK135A Datasheet, PDF (2/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100 125
TA – Ambient Temperature – ˚C
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
25
VDS = 10 V
20
15
6V
10
4V
2V
5
0
–1.0
1V
VG2S = 0
0
+1.0
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
DRAIN CURRENT
VDS = 10 V
f = 1 MHz
4
3
ID = 10 mA at VG2S = 4 V
2
ID = 5 mA at VG2S = 4 V
1
0
–1.0
0
1.0
2.0
3.0
4.0
ID – Drain Current – mA
2
3SK135A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
VG2S = 4 V
4
3
VG1S = 0
2
–0.1 V
1
–0.2 V
–0.3 V
–0.4 V
0
10
20
VDS – Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
25
VDS = 10 V
6V
f = 1 MHz
20
4V
15
2V
10
1V
5
0
–1.0
VG2S = 0
0
+1.0
VG1S – Gate1 to Source Voltage – V
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
VDS = 10 V
f = 1 MHz
2
ID = 10 mA at VG2S = 4 V
1
ID = 5 mA at VG2S = 4 V
0
–1.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V