3SK135A Datasheet, PDF (1/6 Pages) NEC – RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK135A
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High Gps : 18 dB TYP.
• Low NF : 2.7 dB TYP.
PACKAGE DIMENSIONS
in millimeters
2.8^{+–00..32}
1.5^{+–00..12}
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSX
20
V
Gate1 to Source Voltage
VG1S*
±10
V
Gate2 to Source Voltage
VG2S*
±10
V
Drain Current
ID
25
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –65 to +150
˚C
*RL ≥ 10 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transter Admittance
SYMBOL
BVDSX
IDSS
VG1S(off)
VG2S(off)
IG1SS
IG2SS
| yfs |
MIN.
20
0.01
14
TYP.
18
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Ciss
Coss
Crss
Gps*
NF*
1.5
0.5
1.0
0.02
16
18
2.7
MAX.
6
–2.0
–0.7
±20
±20
2.5
1.5
0.03
4.5
0.4^{+–00..015}
5˚
5˚ 0.4^{+–00..105}
5˚ 5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
UNIT
V
mA
V
V
nA
nA
ms
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 5 V, VG2S = 4 V, VG1S = 0
VDS = 10 V, VG2S = 4 V, ID = 10 µA
VDS = 10 V, VG1S = 4 V, ID = 10 µA
VDS = 0, VG1S = ±8 V, VG2S = 0
VDS = 0, VG2S = ±8 V, VG1S = 0
VDS = 5 V, VG2S = 4 V, ID = 10 mA,
f = 1 kHz
VDS = 10 V, VG2S = 4 V,
ID = 10 mA, f = 1 MHz
VDS = 10 V, VG2S = 4 V, ID = 10 mA,
f = 900 MHz
IDSS Classification
Class
Marking
IDSS
L/LS*
U65
0.01 to 2
K/KS*
U66
1 to 6
* Old specification/New specification
Document No. P10411EJ1V0DS00 (1st edition)
(Previous No. TN-1758)
Date Published August 1995 P
Printed in Japan
©
1995