2SD415 Datasheet, PDF (2/4 Pages) NEC – PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

TYPICAL CHARACTERISTICS (Ta = 25°C)
Note
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
2SB548, 549/2SD414, 415
Case Temperature Tc (°C)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
Collector to Emitter Voltage VCE (V)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
2
Data Sheet D16141EJ2V0DS