2SD415 Datasheet, PDF (1/4 Pages) NEC – PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol 2SB548/ 2SB549/ Unit
2SD414 2SD415
Collector to base voltage
VCBO
−100/120
V
Collector to emitter voltage
VCEO
−80/80 −100/100 V
Emitter to base voltage
VEBO
−5.0/5.0
V
Collector current
IC(DC)
−0.8/0.8
A
Collector current
IC(pulse)*
−1.5/1.5
A
Total power dissipation
PT (Ta = 25°C)
1.0
W
Total power dissipation
PT (Tc = 25°C)
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = −80/80 V, IE = 0
VEB = −3.0/3.0 V, IC = 0
VCE = −5.0/5.0 V, IC = −2.0/2.0 mA*
VCE = −5.0/5.0 V, IC = −200/200 mA*
IC = −500/500 mA, IB = −50/50 mA*
IC = −500/500 mA, IB = −50/50 mA*
VCE = −5.0/5.0 V, IC = −100/100 mA
VCB = −10/10 V, IE = 0, f = 1.0 MHz
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
hFE2
S
40 to 80
R
60 to 120
Q
100 to 200
P
160 to 320
MIN.
20
40
TYP.
MAX.
−1.0/1.0
−1.0/1.0
90
−0.4/0.3
−0.9/0.9
70/45
25/15
320
−2.0/2.0
−1.5/1.5
Unit
µA
µA
V
V
MHz
pF
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928