2SD2165 Datasheet, PDF (2/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = 60 V, IE = 0 A
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VEB = 7.0 V, IC = 0 A
VCE = 5.0 V, IC = 1.0 A^Note
VCE = 5.0 V, IC = 3.0 A^Note
IC = 3.0 A, IB = 30 mA^Note
IC = 3.0 A, IB = 30 mA^Note
Gain bandwidth product
fT
VCE = 5.0 V, IC = 0.1 A
Collector capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1.0 MHz
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE1 CLASSIFICATION
Marking
hFE1
M
800 to 1,600
L
1,000 to 2,000
K
1,600 to 3,200
2SD2165
MIN.
800
500
TYP.
1,300
1,000
0.3
110
50
MAX.
10
10
3,200
1.0
1.2
Unit
µA
µA
V
V
MHz
pF
2
Data Sheet D13178EJ3V0DS