2SD2165 Datasheet, PDF (1/5 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SD2165
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2165 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded
insulation package, thus contributing to high-density mounting and
mounting cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
Collector current (pulse)
IC(DC)
6.0
A
IC(pulse)
10^Note
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation (TC = 25°C)
PT
30
W
Total power dissipation (TA = 25°C)
PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150 °C
Note PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
10.0 ±0.3
φ 3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
0.7 ±0.1
2.54 TYP.
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 _{0.65 ±0.1}
2.54 TYP.
1 23
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13178EJ3V0DS00 (3rd edition)
Date Published March 2004 N CP(K)
The mark shows major revised points.
c
Printed in Japan
2002