2SC5011 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

2SC5011
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
50
11
TYP.
120
6.5
0.5
13
1.1
MAX.
1.0
1.0
250
0.9
2.0
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 20 mA*¹
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz*²
VCE = 10 V, IC = 20 mA,f = 1.0 GHz
VCE = 10 V, IC = 7 mA,f = 1.0 GHz
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
EB
R26
50 to 100
FB
R27
80 to 160
GB
R28
125 to 250
2