2SC5011 Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC5011
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product
(fT = 6.5 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
2SC5011-T1
2SC5011-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
* Please contact with responsible NEC person, if you require
evaluation sample. It is available for 50 pcs. one unit sample lot.
(Part No.: 2SC5011)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
1.25 ± 0.1
0.3
+0.1
–0.05
(LEADS 2, 3, 4)
2
3
1
4
0.4
+0.1
–0.05
0 to 0.1
0.15^{+–00..015}
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10399EJ2V0DS00 (2nd edition)
(Previous No. TD-2411)
Date Published July 1995 P
Printed in Japan
©
1993