2SC4225 Datasheet, PDF (2/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
30
20
10
0.5
12
5 10 20
IC - Collector Current - mA
50 70
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
VCE = 10 V
5
2
1
0.5
0.2
0.1
0.5
12
5 10 20
IC - Collector Current - mA
50 70
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 GHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB - Collector to Base Voltage - V
2SC4225
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
50
VCE = 10 V
20
10
5
2
1
0.5
0.5
0.6
0.7
0.8
0.9
VBE - Base to Emitter Voltage - V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1.0 GHz
10
5
0
0.5 1 2
5 10 20
IC - Collector Current - mA
50 70
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.2 GHz
6
5
4
3
2
1
0
0.5 1 2
5 10 20
IC - Collector Current - mA
50 70
2