2SC4225 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC4225
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
• Low Noise and High Gain
NF = 1.5 dB TYP.
at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e ² = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCB0
VCE0
VEB0
IC
PT
Tj
Tstg
25
V
12
V
3.0
V
70
mA
160
mW
150
˚C
–65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Characteristics
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICB0
IEB0
hFE
fT
Cob
S21e ²
NF
MIN.
40
7.5
TYP.
80
4
1.2
9.0
1.5
MAX.
1.0
1.0
200
1.8
3.0
Unit
µA
µA
GHz
pF
dB
dB
Test Conditions
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
VCE = 3 V, IC = 20 mA, pulsed
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank
Marking
hFE
R2
R2
40 to 120
R3
R3
100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
©
1996