2SC4187 Datasheet, PDF (2/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
8
6
4
2
1
0.1
VCE = 1 V
1
10
IC – Collector Current – mA
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
VCE = 1 V
40
IC = 1 mA
2SC4187
INSERTION POWER GAIN vs. FREQUENCY
10
VCE = 1 V
IC = 1 mA
5
0
0.1
1
10
f – Frequency – GHz
MAXIMUM AVAILABLE GAIN AND INSERTION
POWER GAIN vs. COLLECTOR CURRENT
VCE = 1 V
f = 1.0 GHz
10
20
20
5
10
0
0.1
1.0
10
f – Frequency – GHz
NOISE FIGURE AND POWER GAIN AT OPTIMUM NF
vs. COLLECTOR CURRENT
VCE = 1 V
f = 1.0 GHz
10
Ga
5
NF
0
0.1
1
10
IC – Collector Current – mA
0
0
0.1
1
10
IC – Collector Current – mA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
Free Air
150
100
50
0
50
100
150
TA – Ambient Temperature – ˚C
2