2SC4187 Datasheet, PDF (1/6 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC4187
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4187 is designed primarily for use in low voltage and low
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
PACKAGE DIMENSIONS
in millimeters
2.1 ±0.1
1.25 ±0.1
FEATURES
• Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 µA, f = 1.0 GHz
• High Gain : |S21e|² = 6.5 dB TYP. @VCE = 1 V, IC = 1 mA, f = 1.0 GHz
• Small Package
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
15
V
8
V
2
V
5
mA
50
mW
150
˚C
–65 to +150 ˚C
1. Emitter
2. Base
3. Collector
Marking
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
50
4.0
TYP.
100
4.0
0.5
6.5
3.0
MAX.
0.1
0.1
250
0.7
4.5
Unit
µA
µA
GHz
pF
dB
dB
Test Conditions
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 250 µA, pulsed
VCE = 1 V, IC = 1 mA, f = 1 GHz
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IE = 1 mA, f = 1 GHz
VCE = 1 V, IC = 250 µA, f = 1 GHz
hFE Classification
Class
Marking
hFE
R6A
R6A
50 to 100
R6B
R6B
80 to 160
R6C
R6C
125 to 250
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan
©
1996