2SA1649 Datasheet, PDF (2/6 Pages) NEC – PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = −4.0 A, IB = −0.4 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = −4.0 A, IB2 = −IB1 = −0.4 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO
VCE = −30 V, IE = 0
Collector cutoff current
ICER
VCE = −30 V, RBE = 50 Ω, Ta = 125°C
Collector cutoff current
ICEX1
VCE = −30 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = −30 V, VBE(OFF) = 1.5 V,
Ta = 125°C
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
DC current gain
hFE1* VCE = −2.0 V, IC = −0.5 A
DC current gain
hFE2* VCE = −2.0 V, IC = −2.0 A
DC current gain
hFE3* VCE = −2.0 V, IC = −4.0 A
Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.2 A
Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.3 A
Base saturation voltage
VBE(sat)1* IC = −3.0 A, IB = −0.2 A
Base saturation voltage
VBE(sat)2* IC = −4.0 A, IB = −0.3 A
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT
VCE = −10 V, IC = −0.5 A
Turn-on time
Storage time
Fall time
ton
IC = −4.0 A, RL = 5 Ω,
tstg
IB1 = −IB2 = −0.15 A, VCC ≅ −20 V
Refer to the test circuit.
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed
h)( CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT
2SA1649, 2SA1649-Z
MIN.
−30
−40
100
100
60
TYP.
200
250
120
MAX.
−10
−1.0
−10
−1.0
−10
400
−0.3
−0.5
−1.2
−1.5
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
−
−
−
V
V
V
V
pF
MHz
µs
µs
µs
%DVH FXUUHQW
ZDYHIRUP
&ROOHFWRU FXUUHQW
ZDYHIRUP
2
Data Sheet D15588EJ2V0DS