2SA1649 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
• Fast switching speed:
tf = 0.3 µs MAX. (@IC = −3 A)
• High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−40
V
Collector to emitter voltage
VCEO
−30
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−10
A
Collector current (pulse)
IC(pulse)*
−20
A
Base current (DC)
IB(DC)
−3.5
A
Total power dissipation
PT (Tc = 25 °C)
15
W
Total power dissipation
PT (Ta = 25 °C) 1.0**, 2.0***
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*: PW ≤ 300 µs, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm² × 0.7 mm ceramic board mounted
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15588EJ2V0DS00 (2nd edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002