UPD43256B_06 Datasheet, PDF (17/28 Pages) NEC – 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

μPD43256B
Low VCC Data Retention Characteristics (TA = 0 to 70 °C)
Parameter
Symbol
Test Condition
μPD43256B-xxL
μPD43256B-xxLL
Unit
μPD43256B-Axx
μPD43256B-Bxx
Data retention supply voltage VCCDR /CS ≥ VCC − 0.2 V
Data retention supply current ICCDR VCC = 3.0 V, /CS ≥ VCC − 0.2 V
Chip deselection
tCDR
to data retention mode
Operation recovery time
tR
Notes 1. 3 μA (TA ≤ 40 °C)
2. 2 μA (TA ≤ 40 °C), 1 μA (TA ≤ 25 °C)
MIN. TYP. MAX. MIN. TYP. MAX.
2.0
5.5
2.0
5.5
V
0.5
20 ^Note1
0.5
7 ^Note2
μA
0
0
ns
5
5
ms
Data Retention Timing Chart
tCDR
Data retention mode
tR
VCC
4.5 V^Note
VIH (MIN.)
VCCDR (MIN.)
VIL (MAX.)
GND
/CS
/CS ≥ VCC – 0.2 V
Note A version : 3.0 V, B version : 2.7 V
Remark The other pins (Address, /OE, /WE, I/O) can be in high impedance state.
Data Sheet M10770EJEV0DS
17