UPD43256B_06 Datasheet, PDF (1/28 Pages) NEC – 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
μPD43256B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And A and B versions are wide voltage operations.
The μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Low VCC data retention: 2.0 V (MIN.)
• /OE input for easy application
Part number
Access time Operating supply Operating ambient
Supply current
ns (MAX.)
voltage
V
temperature
°C
At operating
mA (MAX.)
At standby At data retention
μA (MAX.) μA (MAX.) ^Note1
μPD43256B-xxL
70, 85
4.5 to 5.5
0 to 70
45
50
3
μPD43256B-xxLL
15
2
μPD43256B-Axx
μPD43256B-Bxx ^Note2
85, 100 , ^Note2 120 ^Note2
100, 120, 150
3.0 to 5.5
2.7 to 5.5
Notes 1. TA ≤ 40 °C, VCC = 3.0 V
2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M10770EJEV0DS00 (14th edition)
Date Published June 2006 NS CP (K)
Printed in Japan
1990, 1993, 1994