UPG2009TB_1 Datasheet, PDF (1/10 Pages) NEC – L-BAND HIGH POWER SPDT SWITCH

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
• Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• L-band digital cellular or cordless telephone
• Buletooth^TM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
µPG2009TB-E3
Package
6-pin super minimold
Marking
G2U
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2009TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark  shows major revised points.
 NEC Compound Semiconductor Devices, Ltd. 2002, 2004