UPG2008TB Datasheet, PDF (1/10 Pages) NEC – GaAs INTEGRATED CIRCUIT

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2008TB
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2008TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for
digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz
to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than
usual 6-pin minimold easy to install and contributes to miniaturizing the system.
FEATURES
• Low insertion loss : LINS = 0.3 dB TYP. @ Vcont = +3.0 V/0 V, f = 1 GHz
LINS = 0.4 dB TYP. @ Vcont = +3.0 V/0 V, f = 2 GHz
• High isolation
: ISL = 27 dB TYP. @ Vcont = +3.0 V/0 V, f = 0.5 to 2.0 GHz
• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• L, S-band digital cellular or cordless telephone
• Buletooth^TM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
µPG2008TB-E3
Package
6-pin super minimold
Marking
G3D
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2008TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10193EJ01V0DS (1st edition)
Date Published November 2002 CP(K)
Printed in Japan
© NEC Compound Semiconductor Devices 2002