UPD444016L Datasheet, PDF (1/16 Pages) NEC – 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444016L
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
Description
The µPD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
• 262,144 words by 16 bits organization
• Fast access time : 8, 10, 12 ns (MAX.)
• Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
• Output Enable input for easy application
• Single +3.3 V power supply
Ordering Information
Part number
Package
µPD444016LLE-A8
µPD444016LLE-A10
µPD444016LLE-A12
µPD444016LG5-A8-7JF
µPD444016LG5-A10-7JF
µPD444016LG5-A12-7JF
44-pin plastic SOJ
(10.16 mm (400))
44-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
Access time
ns (MAX.)
8
10
12
8
10
12
Supply current mA (MAX.)
At operating
At standby
210
5
190
180
210
190
180
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14431EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
The mark • shows major revised points.
Printed in Japan
©
1999