UPD23C32340 Datasheet, PDF (1/20 Pages) NEC – 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C32340, 23C32380
32M-BIT MASK-PROGRAMMABLE ROM
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
PAGE ACCESS MODE
Description
The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is
selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits).
The active levels of OE (Output Enable Input) can be selected with mask-option.
The µPD23C32340 and µPD23C32380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA.
Features
• Pin compatible with NOR Flash Memory
• Word organization
4,194,304 words by 8 bits (BYTE mode)
2,097,152 words by 16 bits (WORD mode)
• Page access mode
BYTE mode : 8 byte random page access (µPD23C32340)
16 byte random page access (µPD23C32380)
WORD mode : 4 word random page access (µPD23C32340)
8 word random page access (µPD23C32380)
• Operating supply voltage : VCC = 2.7 V to 3.6 V
Operating supply
voltage
VCC
3.0 V ± 0.3 V
3.3 V ± 0.3 V
Access time /
Page access time
ns (MAX.)
100 / 25
90 / 25
Power supply current (Active mode)
mA (MAX.)
µPD23C32340
µPD23C32380
40
55
Standby current
(CMOS level input)
µA (MAX.)
30
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15711EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001