UPC1676B Datasheet, PDF (1/5 Pages) NEC – 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

UPC1676B
1.2 GHz BANDWIDTH LOW _UPC1676G
NOISE SILICON MMIC AMPLIFIER _UPC1676P
FEATURES
• WIDE BANDWIDTH:
1200 MHz at 3 dB Point for UPC1676G
1300 MHz at 3 dB Point for UPC1676B, UPC1676P
• HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz
• HIGH ISOLATION
• SINGLE POWER SUPPLY: VCC = 5 V
• INPUT/OUTPUT MATCHED TO 50 Ω
• AVAILABLE IN TAPE AND REEL (UPC1676G)
DESCRIPTION
The UPC1676 is a silicon monolithic integrated circuit de-
signed for wide-band amplifiers covering the VHF to UHF
bands. The series is available in two package styles: a surface
mount package (UPC1676G), and an 8 lead ceramic flat
package (UPC1676B). Also available in chip form (UPC1676P).
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
UPC1676G
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
30
VCC = 5.5 V
GP
20
5.0 V
4.5 V
10
VCC = 5.5 V
10
NF
5
5.0 V
4.5 V
0
60 100
200
0
500
1000 2000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 5 V, f = 500 MHz)
PART NUMBER
PACKAGE OUTLINE
UPC1676B¹
B08
UPC1676G
39
UPC1676P
CHIP
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX
ICC
GS
PSAT
BW
NF
RLIN
RLOUT
ISOL
RTH(J-C)
Supply Current
Small Signal Gain
Saturated Output Power
Bandwidth 3 dB down from gain at 100 MHz
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Thermal Resistance (Junction to Case)
mA
dB
dBm
MHz
dB
dB
dB
dB
°C/W
14 19 24 14 19 24 14 19 24
18 20 22 19 22 24 19 22 24
3.5 5.5
35
35
1000 1300
1000 1200
1000 1300
4.5 6
4.5 6
4.5 6
18 21
9 12
21
10 13
69
13
24 28
24 28
24 28
50
Note:
1. Case must be connected to GND for stable RF operation and optimum thermal dissipation.
California Eastern Laboratories