UPA1720 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
• Low On-Resistance
RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
• Low Ciss : Ciss = 800 pF TYP.
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1720G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±8
A
Drain Current (Pulse) ^Note1
ID(pulse)
±32
A
Total Power Dissipation (TA = 25 °C) ^Note2
PT
2.0
W
Single Avalanche Current ^Note3
IAS
8.0
A
Single Avalanche Energy ^Note3
EAS
6.4
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm² x 2.2 mm
3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13888EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
Date Published March 2000 NS CP(K)
©
Printed in Japan
1998, 1999