FP1 Datasheet, PDF (1/8 Pages) NEC – on-chip resistor PNP silicon epitaxial transistor For mid-speed switching

DATA SHEET
COMPOUND TRANSISTOR
FP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FP1 SERIES LISTS
Products
FP1A4A
FP1L2Q
FP1A3M
FP1F3P
FP1J3P
FP1L3N
FP1A4M
Marking
S30
S31
S32
S33
S36
S34
S35
R1 (KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R2 (KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−25
V
Collector to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.7
A
Collector current (Pulse)
IC(pulse) *
−1.0
A
Base current (DC)
IB(DC)
−20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16181EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928