PDMB100BS12 Datasheet, PDF (4/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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QS043-402-20381（5/5）
Fig.13- Forward Characteristics of Free Wheeling Diode
300
(Typical)
250
TC=25°C
TC=125°C
200
150
100
50
Fig.14- Reverse Recovery Characteristics (Typical)
1000
trr
300
IF=100A
TC=25°C
TC=125°C
100
30
IRrM
10
0
0
1
2
3
4
Forward Voltage VF (V)
3
0
200
400
600
800
1000
1200
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area (Typical)
1000
RG=15(, VGE=±15V, TC=125°C
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
1000 1200
Collector to Emitter Voltage V CE (V)
1400
1
5x10 ^-1
2x10 ^-1
1x10 ^-1
5x10 ^-2
2x10 ^-2
1x10 ^-2
5x10 ^-3
2x10 ^-3
1x10 ^-3
5x10 ^-4
10 ^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25℃
1 Shot Pulse
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
Time t (s)
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