PDMB100BS12 Datasheet, PDF (3/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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QS043-402-20381（4/5）
Fig.7- Collector Current vs. Switching Time (Typical)
2
VCC=600V
RG=15(
VGE=±15V
1.6
TC=25°C
Resistive Load
tOFF
1.2
0.8 tf
0.4
0
0
tON
tr(V_CE)
20
40
60
80
100
Collector Current IC (A)
Fig.9- Collector Current vs. Switching Time
10
3
tOFF
1
tf
0.3
tON
VCC=600V
RG=15(
VGE=±15V
TC=125°C
Inductive Load
0.1
0.03 tr(Ic)
0.01
0.003
0
20
40
60
80
100
120
140
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
40
VCC=600V
RG=15(
VGE=±15V
TC=125°C
30 Inductive Load
EON
20
EOFF
10
ERR
0
0
25
50
75
100
125
150
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=100A
VGE=±15V
TC=25°C
3 ^{Resistive Load}
1
toff
ton
0.3
0.1
10
tr(V_CE)
30
100
Series Gate Impedance RG (()
tf
200
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=600V
5 ^IC=100A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1
toff
0.5
ton
0.2
0.1 ^tf
0.05
tr(I_C)
0.02
10
30
100
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
100
VCC=600V
IC=100A
VGE=±15V
TC=125°C
30 Inductive Load
EON
EOFF
10
ERR
3
1
10
30
100
Series Gate Impedance RG (()
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