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NCE15GD120P Datasheet, PDF (2/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – 1200V, 15A, Trench NPT IGBT
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http://www.ncepower.com
Thermal Characteristics
Symbol
R JC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
ICES Collector Cut-Off Current
IGES G-E Leakage Current
On Characteristics
VGE(th) G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Reverse Transfer
Cres
Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
Rise Time
td(off) Turn-Off Delay Time
tf
Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets
Total Switching Loss
td(on) Turn-On Delay Time
tr
Rise Time
td(off) Turn-Off Delay Time
tf
Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets
Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Test Conditions
VGE=0V, Ic=1mA
VCE= VCES, VGE=0V
VGE= VGES, VCE=0V
IC=15mA, VCE=VGE
IC=15A, VGE=15V
TC=25°C
IC=15A, VGE=15V
TC=125°C
VCE=30V, VGE=0V,
f=1MHz
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=15A,
VGE=15V
Pb Free Product
NCE15GD120P
Typ.
-
-
Max.
0.57
40
Units
°C/W
°C/W
Min. Typ. Max. Units
1200 -
-
V
-
-
1
mA
-
- +/-250 nA
4.0 5.5 7.0
V
-
2
2.5
V
- 2.15
-
V
- 2350 -
pF
-
70
-
pF
-
-
pF
45
-
33
-
ns
-
80
-
ns
- 160
-
ns
- 255 330
ns
- 0.3
-
mJ
- 0.58 0.74 mJ
- 0.88
-
mJ
-
30
-
ns
- 115
-
ns
- 170
-
ns
- 390
-
ns
- 0.38
-
mJ
- 0.89
-
mJ
- 1.27
-
mJ
- 100
-
nC
-
19
-
nC
-
45
-
nC
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
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