NCE15GD120P Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – 1200V, 15A, Trench NPT IGBT

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NCE15GD120P
1200V, 15A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: V_CE(sat)=2.0V@I_C=15A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE15GD120P
Symbol Description
V_CES
Collector to Emitter Voltage
V_GES
I_C
I_CM(1)
I_F
Gate to Emitter Voltage
Continuous Collector Current @T_C=25°C
Continuous Collector Current @T_C=100°C
Pulsed Collector Current
Diode Continuous Forward Current @T_C=100°C
I_FM
Diode Maximum Forward Current
P_D
Maximum Power Dissipation @T_C=25°C
Maximum Power Dissipation @T_C=100°C
T_J
Operating Junction Temperature
T_stg
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
T_L
case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
30
15
45
15
90
220
88
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
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