NCE0157D Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE0157D
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
0.62
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
100
V
Zero Gate Voltage Drain Current
I_DSS
V_DS=100V,V_GS=0V
1
μA
Gate-Body Leakage Current
I_GSS
V_GS=±20V,V_DS=0V
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=250μA
2
4
V
Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=28A
13.3
23
mΩ
Forward Transconductance
g_FS
V_DS=25V,I_D=28A
32
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_lss
2700
PF
V_DS=25V,V_GS=0V,
C_oss
350
PF
F=1.0MHz
C_rss
150
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
t_d(on)
12
nS
Turn-on Rise Time
Turn-Off Delay Time
t_r
V_DD=50V,I_D=28A
55
nS
t_d(off)
V_GS=10V,R_GEN=2.5Ω
45
nS
Turn-Off Fall Time
t_f
47
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
95
nC
V_DS=80V,I_D=28A,
Q_gs
18
nC
V_GS=10V
Q_gd
25
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
V_SD
V_GS=0V,I_S=28A
0.85
1.2
V
Diode Forward Current (Note 2)
I_S
57
A
Reverse Recovery Time
Reverse Recovery Charge
t_rr
TJ = 25°C, IF = 28A
Qrr
di/dt = 100A/μs(Note3)
140
220
nS
650 1000
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,V_DD=50V,V_G=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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