NCE0157D Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE0157D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0157D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● V_DS = 100V,I_D =57A
R_DS(ON) < 23mΩ @ V_GS=10V
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0157D
NCE0157D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Derating factor
I_D
I_D (100℃)
I_DM
P_D
Single pulse avalanche energy (Note 5)
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
100
±20
57
54
210
200
1.61
580
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0