N08L163WC2C Datasheet, PDF (7/9 Pages) NanoAmp Solutions, Inc. – 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit

NanoAmp Solutions, Inc.
N08L163WC2C
Advance Information
Data Retention Characteristics
Parameter
Description
Condition
Min Typ Max Unit
V_DR
I_CCDR
t_CDR
t_R
Vcc for Data Retention
1.5
Data Retention Current
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V _-L
Chip Deselect to Data
Retention Time
0
Operation Recovery Time
t_RC
V
10
µA
4
ns
ns
Data Retention Waveform
Vcc
CE1 or
LB/UB
or
CE2
Vcc(min)
t_CDR
Data Retention Mode
VDR ≥ 1.5V
Vcc(min)
t_R
Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs
Stock No. 23380-C
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.