MSK4804_15 Datasheet, PDF (2/7 Pages) M.S. Kennedy Corporation – Silicon Carbide Mosfet Provides Ultra Fast Switching

ABSOLUTE MAXIMUM RATING ⁸
VDS Collector to Emitter Voltage ^{○ ○ ○ ○ ○ ○ ○ ○ ○}1200V
VGS Gate to Emitter Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○+25/-10V
IOUT Current (Continuous) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○100A
IOUTP Current Pulsed (1mS) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 200A
VCASE Case Isolation Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 2500 V
TST
Storage Temperature Range
○
-55°C to +125°C
○
TJ
Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 175°C
TC Case Operating Temperature Range
MSK 4804H ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
MSK 4804 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +85°C
ELECTRICAL SPECIFICATIONS
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 Industrial grade devices shall be tested to subgroup 1 unless otherwise specified.
3 HI-REL grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2 and sample tested to subgroup 3.
4 Subgroup 4 testing available upon request.
5 Subgroup 1, 4 TA = +25°C
2, 5 TA = +125°C
3, TA = -55°C
6 All specifications apply to both the upper and lower sections of the half bridge.
7 VGS=20V unless otherwise specified.
8 Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle.
2
8548-101 Rev. D 4/13