MSK4804_15 Datasheet, PDF (1/7 Pages) M.S. Kennedy Corporation – Silicon Carbide Mosfet Provides Ultra Fast Switching

MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
1200V/100A
M.S.KENNEDY CORP.
SiC HALF BRIDGE
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
PEM
Half Bridge Configuration
Silicon Carbide Mosfet Provides Ultra Fast Switching
Silicon Carbide Diode Provides Near Zero Recovery
1200V Rated Voltage
100A Continuous Output Current
Internal Zener Clamps on Gates
HI-REL Screening Available (Modified 38534)
Light Weight Domed AISiC Baseplate
Robust Mechanical Design for Hi-Rel Applications
Ultra-Low Inductance Internal Layout
Withstands 96 Hours HAST and Thermal Cycling (-55°C to +125°C)
Contact MSK for MIL-PRF-38534 (Modified) Qualification Status
4804
[phone]
DESCRIPTION:
The MSK 4804 is one of a family of plastic encapsulated modules (PEM) developed specifically for use in military,
aerospace and other severe environment applications. The SiC(Silicon Carbide) technology has superior switching perfor-
mance compared to Si-Based modules. The half bridge configuration and 1200V/100A rating make it ideal for use in high
current motor drive and inverter applications. The Aluminum Silicon Carbide (AlSiC) baseplate offers superior flatness and
light weight; far better than copper or copper alloys found in most high power plastic modules. The high thermal conductiv-
ity materials used to construct the MSK 4804 allow high power outputs at elevated baseplate temperatures.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Motor Drives
Inverters
1
8548-101 Rev. D 4/13