MRF374A Datasheet, PDF (8/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

Freescale Semiconductor, Inc.
MRF374A TYPICAL CHARACTERISTICS
40
-20
35
-25
30
-30
25
-35
20
G_ps
-40
15
IMR
-45
10
5
η
0
0.1
1
-50
V_DD = 32 Vdc
I_DQ = 1.1 A
-55
f = 860 MHz
-60
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 8–VSB Intermodulation, Gain and Efficiency
versus Output Power in Broadband Circuit
19
18 I_DQ = 1.0 A
800 mA
17 _{600 mA}
16 _{400 mA}
15 _{200 mA}
14
V_DD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
13
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 10. Power Gain versus Peak Output Power
in Narrowband Circuit
-20
-25
I_DQ = 200 mA
-30
400 mA
-35
-40
600 mA
-45
800 mA
-50
1.0 A
-55
1
10
V_DD = 32 Vdc
f = 857 MHz
nFrequency = 6 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 11. Intermodulation Distortion versus
Peak Output Power in Narrowband Circuit
50
40
30
20
V_DD = 32 Vdc
10
I_DQ = 800 mA
f = 857 MHz
nFrequency = 6 MHz
0
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Drain Efficiency versus Peak Output Power
in Narrowband Circuit
MRF374A
8
MOTOROLA RF DEVICE DATA
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