MRF374A Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTOR

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF374A/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
28/32 volt transmitter equipment.
• Typical Two–Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 130 Watts PEP
Power Gain — 17.3 dB
Efficiency — 41%
IMD — –32.5 dBc
• 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1
VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Differential Large–Signal Impedance Parameters
MRF374A
470 – 860 MHz, 130 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F–04, STYLE 1
NI–650
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
70
– 0.5, +15
302
1.72
– 65 to +150
200
Class
1 (Minimum)
M2 (Minimum)
Max
0.58
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R3 ^{F DEVICE DATA} _{For More Information On This Product,}
Go to: www.freescale.com
MRF374A
1