MRF9030MR1 Datasheet, PDF(7/12 Page) Freescale Semiconductor, Inc – The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

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MRF9030MR1 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

◁

Zo = 5 â¦

f = 930 MHz

f = 960 MHz

Zin

f = 930 MHz

ZOL*

f = 960 MHz

VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP)

Zin

MHz

â¦

ZOL*

â¦

930

1.07 â j0.160

3.53 + j0.20

945

1.14 â j0.385

3.41 + j0.24

960

1.17 â j0.170

3.60 + j0.17

Zin = Complex conjugate of source impedance.

ZOL* = Complex conjugate of the optimum load

impedance at a given output power, voltage,

IMD, bias current and frequency.

Note: ZOL* was chosen based on tradeoffs between gain, output

power, drain efficiency and intermodulation distortion.

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Z in

Z OL*

Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1)

MOTOROLA RF DEVICE DATA

MRF9030MR1 MRF9030MBR1

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