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MRF9030MR1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9030M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — –31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Moisture Sensitivity Level 3
• Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–07, STYLE 1
(TO–270)
PLASTIC
(MRF9030MR1)
CASE 1337–01, STYLE 1
(TO–272 DUAL LEAD)
PLASTIC
(MRF9030MBR1)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
MRF9030MR1
MRF9030MBR1
Symbol
RθJC
Value
65
+15, –0.5
139
0.93
–65 to +150
175
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
Max
1.08
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
 MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9030MR1 MRF9030MBR1
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