MRF282 Datasheet, PDF (7/11 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

2
100
Tflange = 75°C
1.5
10
Tflange = 100°C
1
1.0
.5
TJ = 175°C
0
0.1
0
4
8
12
16
20
24
28
0
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 10. Class A DC Safe Operating Area
Ciss
Coss
Crss
4
8
12
16
20
24
28
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance versus
Drain Source Voltage
60
50
40
FUNDAMENTAL
30
TOI POINT
14 _{Pout = 10 W (PEP)}
VDD = 26 Vdc
IDQ = 75 mA
13
39
Gps
38
20
10
0
–10
– 20
– 30
– 40
10
12
37
3rd Order
VDD = 26 Vdc
ID = 600 mAdc
11
η
1.6:1
36
f1 = 2000.0 MHz
f2 = 2000.1 MHz
VSWR
1.4:1
20
30
10
35 _1.2:1
40
1930 1940 1950 1960 1970 1980 1990 2000
Pin, INPUT POWER (dBm)
f, FREQUENCY MHz)
Figure 12. Class A Third Order Intercept Point
Figure 13. Performance in Broadband Circuit
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
0
50
100
150
200
250
TJ, JUNCTION TEMPERATURE (°C)
This graph displays calculated MTBF in hours x ampere2 drain cur-
ent. Life tests at elevated temperature have correlated to better than
±10% of the theoretical prediction for metal failure. Divide MTBF
factor by ID2 for MTBF in a particular application.
Figure 14. MTBF Factor versus
Junction Temperature
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
7