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MRF282 Datasheet, PDF (6/11 Pages) Motorola, Inc – LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
TYPICAL CHARACTERISTICS
16
14
14
Pout
12
13
10
8
12
Gps
6
4
11
VDD = 26 Vdc
2
IDQ = 75 mA
f = 2000 MHz Single Tone
0
10
0.0
0.25
0.5
0.75
1.0
Pin, INPUT POWER (WATTS)
Figure 4. Output Power & Power Gain
versus Input Power
14
12 0.8 W
10 0.5 W
8
6 Pin = 0.2 W
VDD = 26 Vdc
IDQ = 75 mA
Single Tone
4
1800
1850
1900
1950
2000
f, FREQUENCY (MHz)
Figure 5. Output Power versus Frequency
– 10
VDD = 26 Vdc
– 20
IDQ = 75 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
– 30
– 40
– 50 3rd Order
5th Order
– 60
7th Order
– 70
0.1
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion
versus Output Power
13
–15
Gps
12
–20
11
–25
10
–30
Pout = 10 W (PEP)
9 IDQ = 75 mA
f1 = 2000.0 MHz
IMD
–35
f2 = 2000.1 MHz
8
–40
16
18
20
22
24
26
28
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 7. Power Gain and Intermodulation
Distortion versus Supply Voltage
– 10
VDD = 26 Vdc
f1 = 2000.0 MHz
– 20 f2 = 2000.1 MHz
– 30 25 mA
50 mA
– 40 100 mA
IDQ = 125 mA
– 50 75 mA
– 60
0.1
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion
versus Output Power
14
IDQ = 125 mA
13 100 mA
12 75 mA
50 mA
11
10 25 mA
9
0.1
VDD = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain versus Output Power
MRF282S MRF282Z
6
MOTOROLA RF DEVICE DATA