MTB2N40E Datasheet, PDF (6/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 400 VOLTS

MTB2N40E
SAFE OPERATING AREA
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
10 µs
100 µs
1 ms
10 ms
0.1
dc
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
45
ID = 2 A
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
t, TIME (SECONDS)
Figure 13. Thermal Response
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
1
10
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
3
R_θJA = 50°C/W
Board material = 0.065 mil FR–4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
6
Motorola TMOS Power MOSFET Transistor Device Data