MTB2N40E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 400 VOLTS

TYPICAL ELECTRICAL CHARACTERISTICS
MTB2N40E
4 _{TJ = 25°C}
3.2
2.4
1.6
VGS = 10 V
8V
7V
6V
4
VDS ≥ 10 V
3
2
0.8
5V
0
0
4
8
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
1
TJ = 100°C
25°C
–55°C
0
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
VGS = 10 V
6
100°C
4
TJ = 25°C
2
–55°C
5.0
TJ = 25°C
4.5
4.0
VGS = 10 V
3.5
15 V
3.0
0
0
1
2
3
4
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
2.5
0 0.5 1 1.5 2 2.5 3 3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 1 A
2
1.5
1
0.5
0
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 125°C
10
0
100
200
300
400
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3