MRF5S19100HR3 Datasheet, PDF (6/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
35
V_DD = 28 Vdc, I_DQ = 1000 mA
30 f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz
25 Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
20 ^{Probability (CCDF)}
15
10
−21
10⁹
η_D
−28
IM3
−35
10⁸
−42
ACPR
−49
G_ps
10⁷
−56
5
−63
0
1
−70
10
75
P_out, OUTPUT POWER (WATTS) AVG.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
N - CDMA TEST SIGNAL
0
1.2288 MHz
−10
Channel BW
−20
−IM3 @
−30
1.2288 MHz
Integrated BW
−40
+IM3 @
1.2288 MHz
Integrated BW
−50
−60
−70
−ACPR @ 30 kHz +ACPR @ 30 kHz
Integrated BW
Integrated BW
−80
−90
−100
−7.5 −6 −4.5 −3 −1.5 0 1.5 3
4.5 6 7.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
MRF5S19100HR3 MRF5S19100HSR3
MOTOROLA RF DEVICE DATA
6
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