MRF5S19100HR3 Datasheet, PDF (1/12 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5S19100H/D
The RF MOSFET Line
RF Power Field Effect Transistors _{MRF5S19100HR3}
N - Channel Enhancement - Mode Lateral MOSFETs _{MRF5S19100HSR3}
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance: V_DD = 28 Volts,
I_DQ = 1000 mA, P_out = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 36.5 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 50.7 dBc @ 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
1990 MHz, 22 W AVG, 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
CASE 465- 06, STYLE 1
NI - 780
MRF5S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19100HSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
- 0.5, +15
269
1.54
- 65 to +150
200
Value (1)
0.64
0.65
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
 M^Mo^Otor^To^Ola,^RIn^Oc.^L2^A00^R4 ^{F DEVICE DATA}
MRF5S19100HR3 MRF5S19100HSR3
For More Information On This Product,
Go to: www.freescale.com
1